| 1. | Half - wave dielectric layer
半波介质层 |
| 2. | The computing time is unrelated to the thickness of the pure dielectric layers
同时在直线法中有效地引入了fft算法用于进一步提高算法的计算效率。 |
| 3. | Development and mass production of targets for lcd - tft and for dielectric layer in optical data storage application
介电层靶材升级与显示器靶材之开发与量产化 |
| 4. | We can classify thin films into four groups : thermal oxides , dielectric layers , polycrystalline silicon , and metal films
我们可以把薄膜分成四组：热氧化物，介电质层，多晶硅，金属薄膜。 |
| 5. | Thin - film area : the area to deposit " dielectric layer " and " metal layer " as the conducted or insulated films , also has cmp ( chemical - mechanical _ polish ) to planarize the chips on the wafer ' s surface and add high ( low ) temprature rtp ( rapid - thermal - process ) to the wafer
薄膜区：专门沉积“介电层” ， “金属层”等导电或不导电薄膜的区域，并兼做晶圆表面器件之平坦化及高（低）温快速热退火制程。 |
| 6. | The subregion with pure dielectric layers is analyzed by mol and the fast fourier transform ( fft ) is introduced to reduce the computing time , while the subregion with conductors is analyzed by fdfd to take advantage fully the superiorities of these two methods
通过在纯介质区域使用直线法，导体所在区域使用有限差分法分别进行求解，充分发挥两种方法各自的优越性。由于在纯介质区域中使用了直线法求解，因此该算法具有计算时间与介质层厚度无关的突出优越性。 |
| 7. | The sequence of two patterns presence is changed alternately , that is , one pattern will appear at the second pulse of total pattern in this half cycle if it appears at first pulse in last half cycle . the stability of square pattern was studied by considering the interaction among the wall charges . the discharge moments of individual filament alternate from long one to short in the square pattern , which can been explained by using the breakdown and quench model through considering the wall discharge accumulated on the dielectric layers
实验研究了正方网格斑图与混合气体的比例及外加电压的关系，给出了班图类型随上述条件变化的相图；实验采用光学方法对正方网格斑图进行了时空动力学测量，发现正方网格斑图是由两套正方网格斑图相互嵌套而成，其中一套的微放电丝位于另一套正方形单元的中心，这两套微放电丝交替进行放电；考虑到壁电荷之间的相互作用，研究了正方网格斑图的稳定性；实验发现正方网格斑图的微放电丝放电时间间隔是长短交替变化的，考虑到电介质表面积累的壁电荷的作用，使用击穿?熄灭方程很好的解释了该现象。 |
| 8. | Both the dielectric layer and metal film were internally deposited on the fiber . it is found that ag is able to engender the highest ir reflectivity among the metal materials , so ag is ascertained as the metal layer material of the hollow waveguide , cop was used in this work as the dielectric material . based on countless calculations , optimum thickness for the deposited films were obtained , namely , 0 . 2 / / m for ag layer and 1 . 4 fan for the cop layer
实验用来制备空芯光纤的基管材料为石英基管；内径为1mm ；通过理论推导与分析发现：相对于其它的金属材料而言，金属银的红外反射率最高，因此金属银最适合用做制备空芯光纤的金属膜层的材料；通过比较几种聚合物的性质确定选择环烯聚合物cop为电介质层材料；通过理论推导与计算确定了金属银膜与电介质膜的最佳理论厚度，即银膜为0 . 2 m ， cop膜的厚度为1 . 4 m 。 |
